Power
dissipation in CMOS digital circuits
The growing
development of CMOS logic VLSI circuits has decreased the circuit size,
increased the switching speed , there is one problem associated with this
technology that is known as the power dissipation . There are many researchers
who are trying to decrease the power consumption of CMOS based digital
circuits. The main cause of power dissipation in CMOS based VLSI circuits are
divided on the basis of its working or behavior.
There are mainly two
cases of Power dissipation 1) Dynamic power dissipation 2) Static power
dissipation. This dynamic power dissipation can be further divided in three
parts known as switching power dissipation, short circuit power dissipation and
glitching power dissipation. These can be reduced by changing the parameters of
the following models:
switching power
P switching
= α Foperating.Vdd2 CL
[for full output swing]
Where
Foperating is operating
frequency, Vdd = supply voltage, CL= Net load capacitance, α= switching activity factor of gate.
P switching = α Foperating
Vdd. Vswing CL [for low voltage swing]
Short circuit
power
Pshort circuit = (μCox/12) (W/L)(Vdd-2Vth)3τ Foperating
Where τ = rise/ fall time of the input signal
The static power dissipation
occurs because of two reasons: DC current and Transistor leakage current.
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