Cree has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs), suitable for use in 1.2 to 1.4GHz L-Band radar amplifier systems.
The 250W CGHV14250 and the 500W CGHV14500 are said to feature the highest known L-Band efficiency performance at 85°C, as well as high power gain performance and wide bandwidth capabilities.
According to Cree, the transistors enhance the performance of band specific applications ranging from UHF to 1800MHz, including tactical air navigation systems and friend or foe systems.
Based on the company's 50V 0.4µ GaN on SiC foundry process, the GaN HEMTs are internally pre-matched on the input, and are available in ceramic/metal flange and pill packages that are said to be much smaller than competing gallium arsenide (GaA) or silicon (Si) rf technology, enabling enhanced design flexibility.
The CGHV14250 features 330W typical output power, 18dB power gain and 77% typical drain efficiency. The CGHV14500, meanwhile, features 500W typical output power, 17dB power gain and 70% typical drain efficiency.
Both of the devices feature 0.3dB pulsed amplitude droop.
According to Cree, the transistors enhance the performance of band specific applications ranging from UHF to 1800MHz, including tactical air navigation systems and friend or foe systems.
Based on the company's 50V 0.4µ GaN on SiC foundry process, the GaN HEMTs are internally pre-matched on the input, and are available in ceramic/metal flange and pill packages that are said to be much smaller than competing gallium arsenide (GaA) or silicon (Si) rf technology, enabling enhanced design flexibility.
The CGHV14250 features 330W typical output power, 18dB power gain and 77% typical drain efficiency. The CGHV14500, meanwhile, features 500W typical output power, 17dB power gain and 70% typical drain efficiency.
Both of the devices feature 0.3dB pulsed amplitude droop.
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